 | |
| Type | Passive |
|---|---|
| Working principle | Photoconductivity |
| Electronic symbol | |
 The symbol for a photoresistor | |
A photoresistor (or light-dependent resistor, LDR, or photo-conductive cell) is a light-controlled variable resistor. The resistance of a photoresistor decreases with increasing incident light intensity; in other words, it exhibits photoconductivity. A photoresistor can be applied in light-sensitive detector circuits, and light-activated and dark-activated switching circuits.
A photoresistor is made of a high resistance semiconductor. In the dark, a photoresistor can have a resistance as high as several megohms (MΩ), while in the light, a photoresistor can have a resistance as low as a few hundred ohms. If incident light on a photoresistor exceeds a certain frequency, photons absorbed by the semiconductor give bound electrons enough energy to jump into the conduction band. The resulting free electrons (and their hole partners) conduct electricity, thereby lowering resistance. The resistance range and sensitivity of a photoresistor can substantially differ among dissimilar devices. Moreover, unique photoresistors may react substantially differently to photons within certain wavelength bands.
A photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, for example, silicon. In intrinsic devices the only available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap. Extrinsic devices have impurities, also called dopants, added whose ground state energy is closer to the conduction band; since the electrons do not have as far to jump, lower energy photons (that is, longer wavelengths and lower frequencies) are sufficient to trigger the device. If a sample of silicon has some of its atoms replaced by phosphorus atoms (impurities), there will be extra electrons available for conduction. This is an example of an extrinsic semiconductor.
The Light Dependent Resistor Cell
The most commonly used photoresistive light sensor is the ORP12 Cadmium Sulphide photoconductive cell. This light dependent resistor has a spectral response of about 610nm in the yellow to orange region of light. The resistance of the cell when unilluminated (dark resistance) is very high at about 10MΩ’s which falls to about 100Ω’s when fully illuminated (lit resistance).
To increase the dark resistance and therefore reduce the dark current, the resistive path forms a zigzag pattern across the ceramic substrate. The CdS photocell is a very low cost device often used in auto dimming, darkness or twilight detection for turning the street lights “ON” and “OFF”, and for photographic exposure meter type applications.
Connecting a light dependant resistor in series with a standard resistor like this across a single DC supply voltage has one major advantage, a different voltage will appear at their junction for different levels of light.
The amount of voltage drop across series resistor, R2is determined by the resistive value of the light dependant resistor, RLDR. This ability to generate different voltages produces a very handy circuit called a “Potential Divider” or Voltage Divider
Network.
As we know, the current through a series circuit is common and as the LDR changes its resistive value due to the light intensity, the voltage present at VOUT will be determined by the voltage divider formula. An LDR’s resistance, RLDR can vary from about 100Ω’s in the sun light, to over 10MΩ’s in absolute darkness with this variation of resistance being converted into a voltage variation at VOUT as shown.
One simple use of a Light Dependent Resistor, is as a light sensitive switch as shown below.
LDR Switch
This basic light sensor circuit is of a relay output light activated switch. A potential divider circuit is formed between the photoresistor, LDR and the resistor R1. When no light is present ie in darkness, the resistance of the LDR is very high in the Megaohms (MΩ’s) range so zero base bias is applied to the transistor TR1 and the relay is de-energised or “OFF”.
As the light level increases the resistance of the LDRstarts to decrease causing the base bias voltage at V1 to rise. At some point determined by the potential divider network formed with resistor R1, the base bias voltage is high enough to turn the transistor TR1 “ON” and thus activate the relay which in turn is used to control some external circuitry. As the light level falls back to darkness again the resistance of the LDR increases causing the base voltage of the transistor to decrease, turning the transistor and relay “OFF” at a fixed light level determined again by the potential divider network.
By replacing the fixed resistor R1 with a potentiometer VR1, the point at which the relay turns “ON” or “OFF” can be pre-set to a particular light level. This type of simple circuit shown above has a fairly low sensitivity and its switching point may not be consistent due to variations in either temperature or the supply voltage. A more sensitive precision light activated circuit can be easily made by incorporating the LDR into a “Wheatstone Bridge” arrangement and replacing the transistor with an Operational Amplifier as shown.
Light Level Sensing Circuit
In this basic dark sensing circuit, the light dependent resistor LDR1 and the potentiometer VR1 form one adjustable arm of a simple resistance bridge network, also known commonly as a Wheatstone bridge, while the two fixed resistors R1 and R2 form the other arm. Both sides of the bridge form potential divider networks across the supply voltage whose outputs V1 and V2 are connected to the non-inverting and inverting voltage inputs respectively of the operational amplifier.
The operational amplifier is configured as a Differential Amplifier also known as a voltage comparator with feedback whose output voltage condition is determined by the difference between the two input signals or voltages, V1 and V2. The resistor combination R1 and R2 form a fixed voltage reference at input V2, set by the ratio of the two resistors. The LDR – VR1 combination provides a variable voltage input V1proportional to the light level being detected by the photoresistor.
As with the previous circuit the output from the operational amplifier is used to control a relay, which is protected by a free wheel diode, D1. When the light level sensed by the LDR and its output voltage falls below the reference voltage set at V2 the output from the op-amp changes state activating the relay and switching the connected load.
Likewise as the light level increases the output will switch back turning “OFF” the relay. The hysteresis of the two switching points is set by the feedback resistor Rf can be chosen to give any suitable voltage gain of the amplifier.
The operation of this type of light sensor circuit can also be reversed to switch the relay “ON” when the light level exceeds the reference voltage level and vice versa by reversing the positions of the light sensor LDR and the potentiometer VR1. The potentiometer can be used to “pre-set” the switching point of the differential amplifier to any particular light level making it ideal as a simple light sensor project circuit.